ksm52n20 / KSMF52N20T n-channel mosfet 200v, 52a, 0.049 ? features ?r ds(on) = 0.041 ? ( typ.)@ v gs = 10v, i d = 26a ? low gate charge ( typ. 49nc) ? low c rss ( typ. 66pf) ? fast switching ? 100% avalanche tested ? improve dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using kersemi proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. to-220 d g s to-220f mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ksm52n20 KSMF52N20T units v dss drain to source voltage 200 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 52 52* a -continuous (t c = 100 o c) 33 33* i dm d r a i n c u r r e n t - p u l s e d (note 1) 208 208* a e as single pulsed avalanche energy (note 2) 2520 mj i ar avalanche current (note 1) 52 a e ar repetitive avalanche energy (note 1) 35.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 357 38.5 w - derate above 25 o c 2.86 0.3 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ksm52n20 KSMF52N20T units r jc thermal resistance, junction to case 0.35 3.3 o c/w r cs thermal resistance, case to sink typ. 0.5 - r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature 2014-7-2 1 www.kersemi.com
t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity ksm52n20 ksm52n20 to-220 - - 50 KSMF52N20T KSMF52N20T to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 200 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.2-v/ o c i dss zero gate voltage drain current v ds = 200v, v gs = 0v - - 1 a v ds = 160v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 26a - 0.041 0.049 ? g fs forward transconductance v ds = 40v, i d = 26a (note 4) -35-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2230 2900 pf c oss output capacitance - 540 700 pf c rss reverse transfer capacitance - 66 100 pf q g(tot) total gate charge at 10v v ds = 160v, i d = 52a v gs = 10v (note 4, 5) -4963nc q gs gate to source gate charge - 19 - nc q gd gate to drain ?miller? charge - 24 - nc t d(on) turn-on delay time v dd = 100v, i d = 20a r g = 25 ? (note 4, 5) - 53 115 ns t r turn-on rise time - 175 359 ns t d(off) turn-off delay time - 48 107 ns t f turn-off fall time - 29 68 ns i s maximum continuous drain to source diode forward current - - 52 a i sm maximum pulsed drain to source diode forward current - - 204 a v sd drain to source diode forward voltage v gs = 0v, i sd = 52a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 52a di f /dt = 100a/ s (note 4) - 162 - ns q rr reverse recovery charge - 1.3 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 1.4mh, i as = 52a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 52a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics 2014-7-2 2 www.kersemi.com package marking and ordering information ksm52n20 / KSMF52N20T
typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 24681012 10 0 10 1 10 2 150 c 25 c -55 c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 v gs = 20v v gs = 10v * note : t j = 25 c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 ? * notes : 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v * note : i d = 52a v gs , gate-source voltage [v] q g , total gate charge [nc] 2014-7-2 3 www.kersemi.com o ksm52n20 / KSMF52N20T
typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe op erating area figure 9-2. maximum safe operating area - fdp52n20 - fdpf52n20t figure 10. maximum drain current -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 26 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 60 i d , drain current [a] t c , case temperature [ c] 2014-7-2 4 www.kersemi.com ksm52n20 / KSMF52N20T
typical performance characteristics (continued) figure 11-1. transient thermal response curve - fdp52n20 figure 11-2. transient thermal response curve - fdpf52n20t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 3.3 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * notes : 1. z jc (t) = 0.35 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 o ksm52n20 / KSMF52N20T 2014-7-2 5 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms o ksm52n20 / KSMF52N20T 2014-7-2 6 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body diode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period -------------------------- 2014-7-2 7 www.kersemi.com o ksm52n20 / KSMF52N20T
mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 2014-7-2 8 www.kersemi.com o ksm52n20 / KSMF52N20T
to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 ksm52n20 / KSMF52N20T 2014-7-2 9 www.kersemi.com
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